Electronic Component Solutions

SiC MOSFETs and SiC SBDs for Industrial and Automotive Markets

The 40 mOhm MSC040SMA120B MOSFET is highly avalanche-rated for industrial, automotive and commercial aviation power applications, and offers a high short circuit withstand rating for robust operation. Additional members of the product family will be released in the coming months, including commercially and AEC-Q101 qualified 700 V and 1200 V SiC MOSFET solutions to address a wide range of power applications.

Next Generation SiC MOSFET Features:

  • Low capacitances and low gate charge
  • Fast switching speed due to low internal gage resistance (ESR)
  • Stable operation at high junction temperature at 175 degrees Celsius
  • Fast and reliable body diode
  • Superior avalanche ruggedness
  • AEC-Q101 qualification

SiC Diode Features:

  • Ultra-fast recovery times
  • Soft recovery characteristics
  • Low forward voltage
  • Low leakage current
  • Avalanche energy rated
  • Essentially zero forward and reverse recovery = reduced switch and diode switching losses
  • AEC-Q101 qualified with usable 175 degrees Celsius junction temperature

PMD Shortform Catalog SiC product brochure

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