Next Generation SiC MOSFET Features:
- Low capacitances and low gate charge
- Fast switching speed due to low internal gage resistance (ESR)
- Stable operation at high junction temperature at 175 degrees Celsius
- Fast and reliable body diode
- Superior avalanche ruggedness
- AEC-Q101 qualification
SiC Diode Features:
- Ultra-fast recovery times
- Soft recovery characteristics
- Low forward voltage
- Low leakage current
- Avalanche energy rated
- Essentially zero forward and reverse recovery = reduced switch and diode switching losses
- AEC-Q101 qualified with usable 175 degrees Celsius junction temperature
