Electronic Component Solutions

New generation 700 and 1200V Silicon Carbide Schottky Barrier Diode

The new AEC-Q101 qualified 700 and 1200V SiC Schottky Barrier Diode (SBD) power devices, provide Electric Vehicle (EV) system designers with solutions that meet stringent automotive quality standards across a wide range of voltage, current and package options.

For EV power designers who need to increase system efficiency while maintaining high quality, the devices maximize system reliability and ruggedness and enable stable and lasting application life. The devices’ superior avalanche performance allows designers to reduce the need for external protection circuits, reducing system cost and complexity.

Silicon Carbide (SiC) semiconductors are innovative, new options for improving system efficiency, supporting higher operating temperatures and reducing costs in your power electronic designs. They can be used in broad range of high-voltage, high-power applications in industrial, automotive, medical, aerospace, defense, and communication market segments.

 

How Can Silicon Carbide Devices Solve Your Design Challenges?

  • Wide range of 700V, 1200V and 1700V SiC products to support a variety of markets and applications
  • Higher SiC power density vs. silicon enables smaller magnetics, transformers, filters and passives, resulting in a compact form factor
  • SiC products can be combined with other Microchip devices, including 8-, 16- and 32-bit microcontrollers, power management devices, analog sensors, touch and gesture controllers and wireless connectivity solutions, to create a total system and lower overall system costs

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