- High Speed InGaAs Photodiodes
FCI-InGaAs-XXX series with active area sizes of 75 µm, 120 µm, 300 µm, 400 µm, and 500 µm, exhibit the characteristics and need for Datacom and Telecom applications. Low capacitance, low dark current and high responsivity from 1100 nm to 1620 nm make these devices ideal for high bit rate receivers used in LAN, MAN, WAN, and other high speed communication systems. The photodiodes are packaged in 3 lead isolated TO-46 cans or with AR coated flat windows or micro lenses to enhance coupling efficiency. FCI-InGaAs-XXX series is also offered with FC, SC, ST and SMA receptacles.
- Large Active Area Photodiodes
FCI-InGaAs-XXX-X series with active area sizes of 1mm, 1.5mm and 3mm, are part of OSI Optoelectronics’ large active area IR sensitive detectors which exhibit excellent responsivity from 1100nm to 1620nm, allowing high sensitivity to weak signals.
These large active area devices are ideal for use in infrared instrumentation and monitoring applications. The photodiode chip are isolated in TO-46 or TO-5 packages with a broadband double sided AR coated flat window. FCI-InGaAs-1500-X and FCI-InGaAs-3000-X come with different shunt resistance values of 5, 10, 20, 30 and 40 MΩ.
- Segmented InGaAs Photodiodes
FCI-InGaAs-QXXX series are large active area InGaAs photodiodes segmented into four separate active areas. These photodiodes come in 1mm and 3mm active area diameter. The InGaAs Quad series with high response uniformity and the low cross talk between the elements are ideal for accurate nulling or centering applications as well as beam profiling applications. They exhibit excellent responsivity from 1100nm to 1620nm, and are stable over time and temperature, and fast response times necessary for high speed or pulse operation. The photodiodes are packaged in isolated TO-5 or TO-8 cans with a broadband double sided AR coated flat window, and also can be mounted on ceramic substrate per request.
- Photodiode Amplifier Hybrids
FCI-XXX-InGaAs-70 series are compact and integrated high speed InGaAs photodetector with wide dynamic range transimpedance amplifier:
1.25Gbps / 2.5 Gbps Photodiode Amplifier Hybrid
InGaAs Photodetectors/Transimpedance Amplifiers
FCI-H125/250G-InGaAs-XX series are compact and integrated high speed InGaAs photodetector with wide dynamic range transimpedance amplifier. Combining the detector with the TIA in ahermetically sealed 4 pin TO-46 package provides ideal conditions for high speed signal amplification. High speed and superior sensitivity make these devices ideal for high-bit rate receivers used in LAN, MAN, WAN and other high speed communication systems.
TO packages come standard with a lensed cap to enhance coupling efficiency, or with a broadband double sided AR coated flat window. The FCI-H125/250G-InGaAs-XX series are also offered with FC, SC, ST and SMA receptacles.
622Mbps Photodiode Amplifier Hybrid
InGaAs Photodetectors/Transimpedance Amplifiers
FCI-H622M-InGaAs-75 series are high-speed 75µm InGaAs photodetector integrated with wide dynamic range transimpedance amplifier. Combining the detector with the TIA in ahermetically sealed 4 pin TO-46 package provides ideal conditions for high-speed signal detection and amplification. Low capacitance, low dark current and high responsivity of the detector, along with low noise characteristics of the integrated TIA, give rise to excellent sensitivity.
In practice, these devices are ideal for datacom and telecom applications. Cost effective TO-46 packages come standard with a lensed cap for design simplification, or with a broadband double-sided AR coated flat window. The FCI-H622M-InGaAs-75 series are also offered with FC, SC, ST and SMA receptacles.
- Back Illuminated InGaAs Photodiodes
FCI-InGaAs-300B1XX series are multifunctional backside illuminated photodiode/arrays. They come standard in a single element diode or 4 – or 8- elements array with active area of 300µm. These back illuminated InGaAs photodiode/arrays are designed to be flip chip mounted (active area facing up), or assembled face down minimizing the overall dimensions. These low inductance, low dark current, and low capacitance back illuminated photodiode /arrays come with or without ceramic substrates.
- Photodiode Ceramic Assembly
These are part of our line of monitor photodiodes mounted on metallized ceramic blocks.
- 10 Gbps InGaAs Photodiode
OSI Optoelectronics’ FCI-InGaAs-36C is an OC-192 (SONET/SDH) capable photosensitive device, exhibiting low dark current and good performance stability. Both Anode and Cathode contacts appear on the chip’s top facet and it makes ideal component in high-speed optical data transport applications at 10Gbps, responding to a spectral envelope that spans from 910nm to 1650nm
- Photodiode Pigtail Assembly
TheFCI-InGaAs-XX-XX-XX with active area of 70µm and 120µm are part of OSI Optoelectronics family of high speed IR sensitive detectors with fiber pigtail package. The single/multi-mode fiber is optically aligned to either the hermetically sealed InGaAs diode in TO-46 lens cap package enhancing the coupling efficiency and stability or directly to the InGaAs diode mounted on a ceramic substrate. High responsivity and low capacitance make these devices ideal for very high-bit rate receivers used in LAN, MAn, WAN and other high speed communication and monitoring/instrumentation systems. Angle polished connectors and custom packages are also available.
For solution involving FC connector and TO-46 attachment, user(s) may consider either FCI-InGaAs-70-SM-Fc or FCI-InGaAs-120-SM-FC in single-mode operation. Similarly, the multi-mode variant is available in FCI-InGaAs-120-MM-FC using 62.5/125 fiber. The back-reflection of -30dB typical is to be experienced in multi-mode based solution.