MOSFETs - Interface

Depletion-Mode N-Channel

 

Low current MOSFETs, (mA a couple Amps,) intended for voltage regulation, level translation, bypass, and protection in systems. Depletion devices are normally-on devices, using a negative voltage to turn off, typically used to source current or voltage signals. Voltages range Volts to 100s of Volts, in smaller SMD and leaded packages.

 

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Enhancement-Mode N-Channel

 

Low current MOSFETs, (100s of mA to a couple Amps,) intended for voltage regulation, level translation, and protection in systems. Enhancement-Mode N-Channel FETs are normally-off devices, requiring a positive voltage to turn on, typically used to sink current. Voltages range 10s of Volts to 100s of Volts, in smaller SMD and leaded packages.

 

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Enhancement-Mode P-Channel

 

Low current MOSFETs , (10s of mA to a couple Amps,) intended for voltage regulation, level translation, and protection in systems. Enhancement-Mode P-Channel FETs are normally-off devices, requiring a pull-down voltage to turn on, typically used to source current. Voltages range 10s of Volts to 100s of Volts, in smaller SMD and leaded packages.

 

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Complimentary MOSFET Arrays

 

Complimentary MOSFET (N & P Channel) Enhancement Mode MOSFET pairs, selected for reasonable matching, intended principally for use as drivers in ultrasound and similar applications. They provide single or multiple half-bridge MOSFET sets acting as source-sink pairs for current. Packages are all SMD, offering voltages 150V to 500V, covering current ratings of 100s of mA to a couple Amps.

 

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N-Channel Enhancement-Mode MOSFET Arrays

 

Low current MOSFETs, (up to a couple Amps,) intended for voltage regulation, level translation, and protection in systems. This family offers Enhancement-Mode N-Channel FETs (normally-off devices) in multiple device sets, and require a positive voltage to turn on, which are typically used to sink current. Voltages range up to 100s of Volts, in smaller SMD and leaded packages.

 

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